In the low-light regime, the significant noise sources are read noise and dark current noise. Noise sources in CCD cameras add in quadrature (the square root of the sum of the squares).

Since dark current noise follows Poisson statistics, the rms dark current noise is the square root of the dark current or, in this case, 2 e-/p. For a 4-second exposure, a total of 4 electrons/pixel are generated (1.0 e-/p/s x 4 sec). For instance, a given camera might have a dark current specification of 1.0 e-/p/s. Dark current noise is the statistical variation of this specification. Dark Current NoiseĮach high-performance CCD camera carries a dark current specification. Boron implantation into the epitaxial silicon layer and proper biasing of the various clock phases drive the dark current electrons away from the potential wells that comprise a pixel, thus reducing the number of electrons per pixel per second (e-/p/s) collected due to dark current. The largest contribution to dark current results from the interface between the silicon dioxide and epitaxial silicon layer within the CCD. MPP devices are fabricated and operated in such a way as to significantly reduce thermal charge generation (dark current). Some CCDs operate in multi-pinned-phase (MPP) mode. Ideally, the dark current noise should be reduced to a point where its contribution is negligible over a typical exposure time. CCDs can be cooled either with thermoelectric coolers (TECs) or liquid nitrogen to reduce this effect. Additionally, this increase in signal also carries a statistical fluctuation known as dark current noise. These electrons are captured by the CCD’s potential wells and counted as signal. Electrons are created over time that are independent of the light falling on the detector. Dark current arises from thermal energy within the silicon lattice comprising the CCD.

E current vs dark noise